| Wiley

172,200원  | 20230404  | 9781394152704

Get heard by being clear and concise The only way to survive in business today is to be a lean communicator. Busy executives expect you to respect and manage their time more effectively than ever. You need to do the groundwork to make your message tight and to the point.

 | IEE

265,470원  | 20050930  | 9780863413537

This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography.

 | Hutson Street Press

52,410원  | 20250522  | 9781025111155

Investigation of the optical and electrical behavior of some semiconductors at very high temperatures has not been an area of much study, at least not experimentally. The importance of such research becomes obvious due to the effects of high temperatures on semiconductor devices such as infrared detectors and light emitters. Besides the destructive effects of thermal stress and melting, changes in the optical properties of the material can greatly affect device performance.

 | Hutson Street Press

27,910원  | 20250522  | 9781025115474

Investigation of the optical and electrical behavior of some semiconductors at very high temperatures has not been an area of much study, at least not experimentally. The importance of such research becomes obvious due to the effects of high temperatures on semiconductor devices such as infrared detectors and light emitters. Besides the destructive effects of thermal stress and melting, changes in the optical properties of the material can greatly affect device performance.

Ramos, Michael  | Wiley

0원  | 20061130  | 9780471798309

 | Wiley

60,000원  | 20040101  | 9780471352501

The clearest, easiest-to-use guide to understanding GAAS 2004 on the market?fully updated! This latest resource to understanding GAAS addresses the toughest part of an accountant’s job?identifying, interpreting, and applying the many audit, attest, review, and compilation standards relevant to a particular engagement.

 | KS OmniScriptum Publishing

182,000원  | 20100805  | 9783838383699

The Swift Heavy Ion irradiation induced surface nanostructuring and modifications of semiconducting materials and its devices are of significances both from fundamental as well as applied aspects and have not been either studied in details or related effects are yet to be fully understood.It has a direct relevance to simulate the degradation effects of electronic devices in space and in high radiation environment.

Liou, Juin. J  | Artech House

155,920원  | 19960401  | 9780890065877

 | KS OmniScriptum Publishing

112,000원  | 20090428  | 9783639100549

Small-signal modeling and microwave noise characterization of InGaP/GaAs HBTs will be explored. Device physics, analytical extraction and numerical optimization are incorporated to extract small-signal equivalent circuit parameters (ECPs), improved by modeling interaction between contact metalizations and hybrid optimization of T and Pi circuit topologies.

Ramos, Michael  | Wiley

0원  | 20051001  | 9780471726920

 | KS OmniScriptum Publishing

134,750원  | 20100812  | 9783838392233

The DLTS (Deep Level Transient Sprctroscopy) method is used for measuring of deep levels in p-n structures, Schottky diodes, etc. The p-i-n diodes are complicated multi layer structures, containing wide i-layer and two junctions: n-i and p-i. As a result, the diode consist of two series capacities. Applied voltage is focused on i-layer and weakly modulates the space charge area in n- and p- layers.

Yuan, Jiann S.  | Wiley

15,000원  | 19990415  | 9780471197461

An up-to-date, comprehensive guide to heterojunction bipolar transistor technology. Owing to their superior performance in microwave and millimeter-wave applications, heterojunction bipolar transistors (HBTs) have become a major force in mobile and wireless communications. This book offers an integrated treatment of SiGe, GaAs, and InP HBTs, presenting a much-needed overview of HBTs based on different materials systems-their fabrication, analysis, and testing procedures. Highly respected expert Jiann S. Yuan discusses in depth the dc and RF performance and modeling of HBT devices, including simulation, thermal instability, reliability, low-temperature and high-temperature performance, and HBT analog and digital circuits. He provides step-by-step presentations of HBT materials-including Si HBTs and III-V and IV-IV compound HBTs, which are rarely described in the literature. Also covered are device and circuit interaction as well as specific high-speed devices in mobile and wireless communications. This immensely useful guide to a rapidly expanding field includes more than 200 figures, tables of different material systems in terms of their physical parameters, and up-to-date experimental results culled from the latest research. An essential resource for circuit and device designers in the semiconductor industry, SiGe, GaAs, and InP Heterojunction Bipolar Transistors is also useful for graduate students in electrical engineering, applied physics, and materials science.

 | KS OmniScriptum Publishing

105,000원  | 20100624  | 9783838341422

Materials in smaller scales exhibit promising properties that are useful for wide variety of applications. Semiconductor quantum wells and quantum dots are two main examples of low-dimensional systems, where the quantum wells act as two-dimensional systems and the quantum dots act as zero-dimensional systems. Alternatively, semiconductor nanowires act as one-dimensional materials, and they exhibit promising and device applicable properties.

Ladbrooke, Peter H.  | Artech House

244,120원  | 19890319  | 9780890063149

 | OmniScriptum GmbH & Co KG

148,750원  | 20180228  | 9786131581618

Les performances de plusieurs dispositifs fabriques sur des materiaux III-V sont lourdement affectees par la grande densite des etats de surface qui sont localises au voisinage du milieu de la bande interdite (niveaux profonds). Ces etats electroniques sont responsables du pinning du niveau de Fermi, et empechent l'emergence d'une technologie MOS (Metal- Oxyde-Semiconducteur) viable a ce jour sur ces materiaux.