| Edizioni Sapienza

91,260원  | 20240929  | 9786208135737

Il MOSFET, pietra miliare dell'elettronica moderna, ha subito una notevole evoluzione dalla sua nascita. Integrando meccanismi di controllo ottici, i ricercatori hanno sbloccato capacita senza precedenti, fondendo la velocita e la precisione dei segnali ottici con la robustezza dei dispositivi elettronici tradizionali. Questa sinergia ha profonde implicazioni in uno spettro di campi: dalle telecomunicazioni all'informatica quantistica, dall'efficienza energetica alla strumentazione biomedica.

 | Springer

614,600원  | 20041130  | 9783540210818

 | Scholars' Press

154,580원  | 20140317  | 9783639712483

Silicon carbide is the only wide band gap semiconductor that has a native oxide, and a leading candidate for development of next-generation, energy efficient, high power metal-oxide-semiconductor field effect transistors (MOSFETs). Progress in this technology has been limited by the semiconductor-dielectric interface structure and its effect on the inversion layer mobility.

 | KS OmniScriptum Publishing

130,370원  | 20251009  | 9786209039553

This book focuses in the development of a novel structure that can be in corporate to form a device with two strained Si layers in the channel region forming tri-layered strained channel heterostructure on insulator (HOI) nano-MOS system, which can be implemented to form a NanoFET.

 | OmniScriptum GmbH & Co KG

94,980원  | 20180228  | 9786131552021

La diminution soutenue des dimensions du transistor accelere la rencontre de la microelectronique avec la mecanique quantique et d'autres lois regissent desormais le transport des electrons. La simulation des composants microelectroniques a donc besoin de nouvelles theories et techniques de modelisation ameliorant la comprehension physique des dispositifs de taille nanometrique. Ce livre presente le principe des techniques evolutionnaires (GA, PSO,...

 | KS OmniScriptum Publishing

121,060원  | 20121219  | 9783846546543

LED lighting has a promising future in consumer markets. Many researchers have conducted researches to improve the LED driver efficiencies. In this book, a computer model of a high efficiency resonant power LED driver is developed. The LED driver circuit is constructed and simulated at 20 kHz to 35 kHz of switching frequencies of the MOSFET. The OrCAD 16.2 is used as simulation software.

 | KS OmniScriptum Publishing

162,030원  | 20121121  | 9783659280917

The classical method of MOSFET scaling has served us well for more than 30 years. The new era of scaling is one where material and structure innovation are just as important as dimensional scaling. The dimensional scaling leads to short channel effects (SCEs) which are going to severely affect the device performance. The content of this book may be used to analyze the effect of SCEs on the device performance.

 | KS OmniScriptum Publishing

132,230원  | 20120818  | 9783659197864

Scaling of MOSFET is being carried out through several dcades and we moved from micron to nano scale region. Scaling improves performance but at the same time it has some adverse effect, because as MOSFET is scaled down the source and drain come so close to each other so that the gate is loosing control over the channel is called short channel effect.

 | Oxford USA

359,460원  | 20000905  | 9780195116427

 | KS OmniScriptum Publishing

149,000원  | 20090519  | 9783639148824

Compact models of devices are used in circuit simulators, in order to predict the functionality of circuits. Multiple-gate devices will be preferred in nanoscale circuits, thus calling for accurate and reliable compact models, an important prerequisite for successful circuit design.

 | LAP Lambert Academic Publishing

12,290원  | 20111007  | 9783846522004

This text book is intended to take readers having only a minimal background and knowledge in device to the point at which they can model any short channel MOSFET.The readers will understand the utility of modeling any characteristic parameter of mosfet.The goal is to provide the most up-to-date information in the field. The text is reinforced with physical and intuitive explanations and necessary mathematical quantitative analysis.

 | KS OmniScriptum Publishing

108,020원  | 20120806  | 9783659149511

The aggressive scaling of the CMOS technology in the deep submicrometer regime gives rise to the short channel effects(SCEs). The double gate or multi-gate devices provide a better scalability option due to its excellent immunity to short-channel effects. This work focuses on the performance analysis of ultra-thin body Triple Metal Double Gate(TM-DG) MOSFET implemented with the high-k dielectric in gate oxide.

Hu, Chenming, Yuhua Cheng, Cheng  | Kluwer

409,730원  | 20030612  | 9780792385752

Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.

Schneider, Marcio Cherem/ Galup-Montoro, Carlos  | Cambridge

184,380원  | 20210101  | 9780521110365

Covering the essentials of analog circuit design, this book takes a unique design approach based on a MOSFET model valid for all operating regions, rather than the standard square-law model. Opening chapters focus on device modeling, integrated circuit technology, and layout, whilst later chapters go on to cover noise and mismatch, and analysis and design of the basic building blocks of analog circuits, such as current mirrors, voltage references, voltage amplifiers, and operational amplif...

 | OmniScriptum GmbH & Co KG

102,430원  | 20180228  | 9786131574061

La voie de l'integration empruntee par les constructeurs a cree une evolution du procede et de la physique des transistors. A une echelle submicronique, la degradation de la performance des transistors, devient un obstacle majeur a l'integration. Les transistors multi grille peuvent etre potentiellement consideres comme une solution a ce probleme.