| Edizioni Sapienza

90,650원  | 20240929  | 9786208135737

Il MOSFET, pietra miliare dell'elettronica moderna, ha subito una notevole evoluzione dalla sua nascita. Integrando meccanismi di controllo ottici, i ricercatori hanno sbloccato capacita senza precedenti, fondendo la velocita e la precisione dei segnali ottici con la robustezza dei dispositivi elettronici tradizionali. Questa sinergia ha profonde implicazioni in uno spettro di campi: dalle telecomunicazioni all'informatica quantistica, dall'efficienza energetica alla strumentazione biomedica.

 | Springer

610,480원  | 20041130  | 9783540210818

 | Scholars' Press

153,550원  | 20140317  | 9783639712483

Silicon carbide is the only wide band gap semiconductor that has a native oxide, and a leading candidate for development of next-generation, energy efficient, high power metal-oxide-semiconductor field effect transistors (MOSFETs). Progress in this technology has been limited by the semiconductor-dielectric interface structure and its effect on the inversion layer mobility.

 | KS OmniScriptum Publishing

103,600원  | 20260403  | 9786209855757

Este livro centra-se no desenvolvimento de uma nova estrutura que pode ser incorporada para formar um dispositivo com duas camadas de Si deformadas na regiao do canal, formando um sistema nano-MOS de canal deformado de tres camadas sobre isolador (HOI), que pode ser implementado para formar um NanoFET.

 | KS OmniScriptum Publishing

103,600원  | 20260403  | 9786209850639

Questo libro si concentra sullo sviluppo di una struttura innovativa che puo essere utilizzata per formare un dispositivo con due strati di Si teso nella regione del canale, formando un sistema nano-MOS a canale teso a tre strati su isolante (HOI), che puo essere implementato per formare un NanoFET.

 | KS OmniScriptum Publishing

129,500원  | 20251009  | 9786209039553

This book focuses in the development of a novel structure that can be in corporate to form a device with two strained Si layers in the channel region forming tri-layered strained channel heterostructure on insulator (HOI) nano-MOS system, which can be implemented to form a NanoFET.

 | KS OmniScriptum Publishing

103,600원  | 20260403  | 9786209853197

Niniejsza ksi??ka koncentruje si? na opracowaniu nowatorskiej struktury, ktora mo?e by? stosowana w korporacjach do tworzenia urz?dze? z dwiema napr??onymi warstwami Si w obszarze kanału, tworz?c trojwarstwow? napr??on? heterostruktur? kanału na izolatorze (HOI) nano-MOS, ktora mo?e by? zaimplementowana w celu utworzenia NanoFET.

 | KS OmniScriptum Publishing

120,250원  | 20121219  | 9783846546543

LED lighting has a promising future in consumer markets. Many researchers have conducted researches to improve the LED driver efficiencies. In this book, a computer model of a high efficiency resonant power LED driver is developed. The LED driver circuit is constructed and simulated at 20 kHz to 35 kHz of switching frequencies of the MOSFET. The OrCAD 16.2 is used as simulation software.

 | OmniScriptum GmbH & Co KG

94,350원  | 20180228  | 9786131552021

La diminution soutenue des dimensions du transistor accelere la rencontre de la microelectronique avec la mecanique quantique et d'autres lois regissent desormais le transport des electrons. La simulation des composants microelectroniques a donc besoin de nouvelles theories et techniques de modelisation ameliorant la comprehension physique des dispositifs de taille nanometrique. Ce livre presente le principe des techniques evolutionnaires (GA, PSO,...

 | LAP Lambert Academic Publishing

86,950원  | 20240118  | 9786207457984

The development of a revolutionary transistor architecture that transformed the semiconductor industry may be seen in the timeline of FinFET technology. This novel three-dimensional structure has expanded the capabilities of conventional planar transistors from its initial inception. FinFET has evolved into the preferred option for high-performance computing systems throughout time thanks to its enhanced power efficiency, decreased leakage, and better control over the current flow.

 | KS OmniScriptum Publishing

105,450원  | 20260409  | 9786209848070

Ce livre se concentre sur le developpement d'une nouvelle structure qui peut etre utilisee en entreprise pour former un dispositif avec deux couches de Si deformees dans la region du canal formant un systeme nano-MOS a canal deforme tri-couche sur isolant (HOI), qui peut etre mis en œuvre pour former un NanoFET.

 | KS OmniScriptum Publishing

160,950원  | 20121121  | 9783659280917

The classical method of MOSFET scaling has served us well for more than 30 years. The new era of scaling is one where material and structure innovation are just as important as dimensional scaling. The dimensional scaling leads to short channel effects (SCEs) which are going to severely affect the device performance. The content of this book may be used to analyze the effect of SCEs on the device performance.

 | KS OmniScriptum Publishing

131,350원  | 20120818  | 9783659197864

Scaling of MOSFET is being carried out through several dcades and we moved from micron to nano scale region. Scaling improves performance but at the same time it has some adverse effect, because as MOSFET is scaled down the source and drain come so close to each other so that the gate is loosing control over the channel is called short channel effect.

 | Oxford USA

357,050원  | 20000905  | 9780195116427

 | KS OmniScriptum Publishing

148,000원  | 20090519  | 9783639148824

Compact models of devices are used in circuit simulators, in order to predict the functionality of circuits. Multiple-gate devices will be preferred in nanoscale circuits, thus calling for accurate and reliable compact models, an important prerequisite for successful circuit design.