Hu  | World Scientific Pub

288,350원  | 20130318  | 9789812568632

Presents the art of advanced MOSFET modeling for integrated circuit simulation and design. This book provides the essential mathematical and physical analyses of the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits.

Schneider, Marcio C.  | World Scientific

332,430원  | 20070227  | 9789812568106

Addressed to circuit designers with a treatment that appeals to device specialists, this book presents a view of compact modeling. It provides both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models.

 | KS OmniScriptum Publishing

146,000원  | 20090519  | 9783639148824

Compact models of devices are used in circuit simulators, in order to predict the functionality of circuits. Multiple-gate devices will be preferred in nanoscale circuits, thus calling for accurate and reliable compact models, an important prerequisite for successful circuit design.