| KS OmniScriptum Publishing

154,000원  | 20131202  | 9783659481888

To cope with the rapid pace of device scaling, the semiconductor industry demands multiple data to be stored in a single memory cell which eventually results in high capacity (data storage) miniaturized memory. In this work development of highly repeatable, forming free low voltage, low power resistive switching phenomenon in TiO2 based Metal-Insulator-Metal device structure.

 | Morgan & Claypool

61,250원  | 20160318  | 9781627059299

RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed.

 | Springer

52,480원  | 20160317  | 9783031009020

State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed.