| KS OmniScriptum Publishing

110,250원  | 20120912  | 9783659242984

One of the major issues in the design of SRAMs is the memory access time (or speed of read operation). For having high performance SRAMs, it is essential to take care of the read speed both in the cell-level design and in the design of a clever sense amplifier. Sense amplifiers are one of the most critical circuits in the organization of CMOS memories. Their performance strongly influences both memory access time and overall memory power consumption.

 | KS OmniScriptum Publishing

134,750원  | 20121217  | 9783845403779

Instead of the costly RFID reader, WNIC can be used to communicate with the RFID transponder. However, the memory block, which is one of the major parts in RFID transponder, has to be redesigned. This book is concentrated on designing an improved CMOS Sense Amplifier (SA) and Charge Pump (CP) circuits, which are compatible for readerless RFID transponder EEPROM. Memory read access time; power dissipation and the reliability of an EEPROM are strongly influenced by the performance of the SA.