Tan, Cher Ming/Roy, Arijit/  | World Scientific Pub Co Inc

208,600원  | 20210101  | 9789814273329

Presents a description of the electro migration in integrated circuits. This book examines the various interconnected systems and their evolution employed in integrated circuit technology. It is suitable for readers on electro migration in ULSI interconnections.

Lau, W. S.  | World Scientific Publishing Company

165,760원  | 20171029  | 9789813222151

The main focus of this book is ULSI front-end technology. It covers from the early history of semiconductor science & technology from 1874 to state-of-the-art FINFET technology in 2016. Some ULSI back-end technology is also covered, for example, the science and technology of MIM capacitors for analog CMOS has been included in this book.

Baklanov, Mikhail, Ho, Paul S., Zschech, Ehrenfried  | John Wiley & Sons Inc

375,620원  | 20120417  | 9780470662540

This technology is the base for all modern microelectronic components that are the enabling technology for all information technology systems and devices. Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips. "This book presents an in-depth overview of present status, novel developments and new materials and approaches for advanced interconnect technology"-- This technology is the base for all modern microelectronic components that are the enabling technology for all information technology systems and devices.

Zeev Zalevsky  | William Andrew

71,720원  | 20170103  | 9780323241434

Introduces the reader to transmission and scanning microscope image processing for metal and non-metallic microstructures. This book presents novel "smart" image processing methods, applications, and case studies concerning quality improvement of microscope images of microelectronic chips and process optimization.

Ibe, Eishi H.  | Wiley

210,940원  | 20150901  | 9781118479292

This book provides the reader with knowledge on a wide variety of radiation fields and their effects on the electronic devices and systems. The author covers faults and failures in ULSI devices induced by a wide variety of radiation fields, including electrons, alpha-rays, muons, gamma rays, neutrons and heavy ions.

Tan, Cher Ming  | Springer Verlag

204,850원  | 20120705  | 9780857293091

Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections provides a detailed description of the application of finite element methods (FEMs) to the study of ULSI interconnect reliability. Over the past two decades the application of FEMs has become widespread and continues to lead to a much better understanding of reliability physics.

 | KS OmniScriptum Publishing

141,550원  | 20081223  | 9783639111309

Electrochemical Deposition (ECD) has become the most promising technology for copper interconnect on ULSI circuits since 1997. Dual damascene technology followed by ECD has allowed for copper to replace aluminum in the ULSI interconnect. The ECD method needs a seed layer, but it becomes more difficult to conformally deposit a seed layer for copper ECD as the feature size decreases beyond 65 nm.