Advances in Chemical Mechanical Planarization (Cmp) (Paperback, 2)

Part I CMP of dielectric and metal films 1. Chemical and physical mechanisms of dielectric CMP 2. Cu CMP Challenges in 22 nm BEOL and beyond 3. Consumables for ultralow topography at the 14nm nodes (and beyond) 4. Electrochemical techniques and their applications for CMP of metal films 5. Ultra low-k materials and CMP 6. CMP challenges with W, Co, and Ru as interconnect and barrier films 7. CMP processing of high-mobility channel materials; alternatives to Si 8. Multiscale modeling of CMP 9. Chemical mechanical polishing (CMP) of silicon carbide (SiC) 10. Chemical and physical mechanisms of CMP of gallium nitride 11. Abrasive-free and ultralow abrasive CMP processes 12. Tribology of CMP 13. Environmental aspects of planarization processes 14. Synthesis and characterization of silica and ceria abrasives for use in CMP 15. CMP for memory devices

Part II Consumables and Process Control for Improved CMP 16. Preparation and characterization of slurry for CMP 17. Chemical Metrology Methods for CMP Quality 18. Diamond Disc Pad Conditioning in Chemical Mechanical Polishing 19. Characterization of surface processes during oxide CMP by in situ FTIR spectroscopy 20. CMP removal rate uniformity and role of carrier parameters 21. Approaches to defect characterization, mitigation and reduction 22. Challenges and solutions for post-CMP cleaning at device and interconnect levels 23. Applications of CMP to More than Moore Devices 24. CMP for phase change materials