Handbook of Gan Semiconductor Materials and Devices (Paperback)

Section I?Fundamentals1 III-Nitride Materials and CharacterizationBo Shen, Ning Tang, XinQiang Wang, ZhiZhong Chen, FuJun Xu, XueLin Yang, TongJun Yu, JieJun Wu, ZhiXin Qin, WeiYing Wang, YuXia Feng, and WeiKun Ge2 Microstructure and Polarization Properties of III-Nitride SemiconductorsFernando A. Ponce3 Optical Properties of III-Nitride SemiconductorsPlamen P. Paskov and Bo Monemar4 Electronic and Transport Properties of III-Nitride SemiconductorsYuh-Renn WuSection II?Growth and Processing5 Growth Technology for GaN and AlN Bulk Substrates and TemplatesMichael Slomski, Lianghong Liu, John F. Muth, and Tania Paskova6 III-Nitride Metalorganic Vapor-Phase EpitaxyDaniel D. Koleske7 Molecular Beam Epitaxial Growth of III-Nitride Nanowire Heterostructures and Emerging Device ApplicationsShizhao Fan, Songrui Zhao, Faqrul A. Chowdhury, Renjie Wang, and Zetian Mi8 Advanced Optoelectronic Device ProcessingFengyi JiangSection III? Power Electronics9 Principles and Properties of Nitride-Based Electronic DevicesAn-Jye Tzou, Chun-Hsun Lee, Shin-Yi Ho, Hao-Chung (Henry) Kuo, and Jian-Jang Huang10 Power Conversion and the Role of GaNSrabanti Chowdhury11 Recent Progress in GaN-on-Si HEMTKevin J. Chen and Shu Yang12 Reliability in III-Nitride DevicesDavide Bisi, Isabella Rossetto, Matteo Meneghini, Gaudenzio Meneghesso, and Enrico ZanoniSection IV Light Emitters13 Internal Quantum Efficiency for III-Nitride?Based Blue Light-Emitting DiodesZi-Hui Zhang, Yonghui Zhang, Hilmi Volkan Demir, and Xiao