Analysis and Design of MOSFETs : Modeling, Simulation, and Parameter Extraction (Hardcover)

Preface. 1. MOSFET Physics and Modeling. 2. MOSFET Simulation Using Device Simulator. 3. Extraction of the Threshold Voltage of MOSFETs. 4. Methods for Extracting the Effective Channel Length of MOSFETs. 5. Extraction of the Drain and Source Series Resistances of MOSFETs. 6. Parameter Extraction of Lightly-Doped Drain (LDD) MOSFETs. Appendices. A. Physical Constants and Unit Conversions. B. Properties of Germanium, Silicon, and Gallium Arsenide (at 300 K). C. Properties of SiO2 and Si3N4 (at 300 K). D. Derivation of the Integral Function and its Applications to Parameter Extraction. Subject Index. About the Authors.