The MOCVD Challenge : Volume 2: A Survey of GaInAsP-GaAs for Photonic and Electronic Device Applications (Hardcover)

Preface. Foreword. Introduction. Introduction to semiconductor compounds: III-V semiconductor alloys; III-V semiconductor devices; Technology of multilayer growth; References. MOCVD growth technique: MOCVD growth systems; The MOCVD growth mechanism and growth process; Gas flow patterns and reactor design; MOCVD starting materials; Low-pressure MOCVD and MOMBE; References. ^IIn-situ^N characterization during MOCVD: Introduction; Reflectance anisotropy and ellipsometry; Optimization of the growth of III-V binaries by RDS; RDS investigation of III-V lattice-matched heterojunctions; RDS investigation of III-V lattice-mismatched structures; Insights on the growth process; References. ^IEx-situ^N characterization techniques: Chemical bevel revelation; Deep-level transient spectroscopy; X-ray diffraction; Photoluminescence; Electrochemical capacitance-voltage and photovoltage spectroscopy; Resistivity and Hall measurement; Thickness measurement; References. MOCVD growth of GaAs layers: Introduction; GaAs and related compounds band structure; MOCVD growth mechanism of GaAs and related compounds; Experimental details; Incorporation of impurities in GaAs grown by MOCVD; References. Growth and characterization of the GaInP-GaAs system: Introduction; Growth details; Structural order in Ga^OxIn^O1-xP alloys grown by MOCVD; Defects in GaInP layers grown by MOCVD; Doping behaviour of GaInP; GaAs-GaInP heterostructures; Growth and characterization of GaInP-GaAs multilayers by MOCVD; Optical and structural investigations of GaAs-GaInP quantum wells and superlattices grown by MOCVD. Characterization of GaAs-GaInP quantum wells by Auger analysis on chemical bevels; Evaluation of the band offsets of GaAs/GaInP multilayers by electroreflectance (Razeghi ^Iet al^N 1992); Intersubband hole absorption in GaAs-GaInP quantum wells; References. Optical Devices: Electro-optical Modulators; GaAs-based infrared photodetectors grown by MOCVD; Solar cells and GaAs solar cells; References. GaAs-based lasers: Introduction; Basic physical concepts; Laser structures; New GaAs-based materials for lasers; References. GaAs- based heterojunction electron devices grown by MOCVD: Introduction; Heterostructure field-effect transistors (HFETs); Heterojunction bipolar transistors (HBTs); References. Optoelectronic integrated circuits (OEICs): Introduction; Material considerations; OEICs on Si substrate; The role of optoelectronic integration in computing; Examples of optoelectronic integration by MOCVD; References. Appendices. Effect of substrate miscut on the measured superlattice period. Optimization of thickness and In composition of InGaAs well for 980 nm lasers: References. Energy levels and laser gains in a quantum well (GaInAsP): the `effective mass approximation'. Luttinger-Kohn Hamiltonian: ^Ik . p^N theory; Luttinger-Kohn Hamiltonian; References. Infrared detectors: Classification; General theory of photodetectors; References. Index.