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Metallic Films for Electronic, Optical and Magnetic Applications : Structure, Processing and Properties

Metallic Films for Electronic, Optical and Magnetic Applications : Structure, Processing and Properties (Hardcover)

Kevin Coffey, Katayun Barmak (엮은이)
Woodhead Pub Ltd
555,180원

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Metallic Films for Electronic, Optical and Magnetic Applications : Structure, Processing and Properties
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· 제목 : Metallic Films for Electronic, Optical and Magnetic Applications : Structure, Processing and Properties (Hardcover) 
· 분류 : 외국도서 > 기술공학 > 기술공학 > 금속공학
· ISBN : 9780857090577
· 쪽수 : 656쪽
· 출판일 : 2013-12-13

목차

  • Contributor contact details
  • Woodhead Publishing Series in Electronic and Optical Materials
  • Preface
  • Part I: Structure and processing of metallic films
    • 1: X-ray diffraction for characterizing metallic films
      • Abstract
      • 1.1 Introduction
      • 1.2 Reciprocal space
      • 1.3 Phase identification
      • 1.4 Chemical order in binary alloys
      • 1.5 Defects
      • 1.6 Epitaxy and texture
      • 1.7 Experimental methods
      • 1.8 Conclusion and future trends
    • 2: Crystal orientation mapping in scanning and transmission electron microscopes
      • Abstract
      • 2.1 Introduction
      • 2.2 Electron backscatter diffraction (EBSD) in the scanning electron microscope (SEM)
      • 2.3 Extraction of relative grain boundary energy from EBSD crystal orientation maps
      • 2.4 Analysis of grain boundary plane distribution (GBPD) from EBSD crystal orientation maps
      • 2.5 Precession electron diffraction (PED) in the transmission electron microscope (TEM)
      • 2.6 Determination of grain boundary character distribution (GBCD) from PED crystal orientation maps
      • 2.7 Trace analysis of PED crystal orientation maps
      • 2.8 Conclusion and future trends
    • 3: Structure formation during deposition of polycrystalline metallic thin films
      • Abstract
      • 3.1 Introduction
      • 3.2 Structural aspects of polycrystalline thin films
      • 3.3 Main aspects of the physical vapour deposition (PVD) preparation methods applied for the synthesis of polycrystalline metallic thin films
      • 3.4 Synthesized view of the structure evolution in polycrystalline thin films
      • 3.5 Fundamental phenomena of structure evolution
      • 3.6 Case studies
      • 3.7 Conclusion
      • 3.8 Acknowledgements
    • 4: Post-deposition grain growth in metallic films
      • Abstract
      • 4.1 Introduction
      • 4.2 Normal and abnormal grain growth
      • 4.3 How is grain size measured in thin films?
      • 4.4 Stagnation of grain growth and the ‘universal’ experimental grain size distribution
      • 4.5 Theory and simulation of curvature-driven growth in two dimensions
      • 4.6 Comparison of experiments and two-dimensional simulations of grain growth with isotropic boundary energy
      • 4.7 Reduction of surface and elastic strain energies
      • 4.8 Anisotropy of grain boundary energy
      • 4.9 Grain boundary grooving
      • 4.10 Solute drag
      • 4.11 Triple junction drag
      • 4.12 Conclusion
    • 5: Fabrication and characterization of reactive multilayer films and foils
      • Abstract
      • 5.1 Introduction
      • 5.2 Background on self-sustaining reactions and reactive multilayer films and foils
      • 5.3 Fabrication of reactive multilayer films and foils
      • 5.4 Microstructures, chemistries and geometries of reactive multilayers
      • 5.5 Chemical energies stored within reactive multilayer films and foils
      • 5.6 Thresholds for the ignition of self-propagating reactions
      • 5.7 Reaction propagation, analytical models, and maximum temperatures
      • 5.8 Numerical predictions of reaction propagation: steady and unsteady
      • 5.9 Observations and predictions of rapid intermixing and phase transformations
      • 5.10 Applications of reactive multilayer foils
      • 5.11 Conclusion and future trends
      • 5.12 Sources of further information and advice
      • 5.13 Acknowledgements
    • 6: Metal silicides in advanced complementary metal-oxide-semiconductor (CMOS) technology
      • Abstract
      • 6.1 Introduction
      • 6.2 State of the art of complementary metal-oxide-semiconductor (CMOS) technology
      • 6.3 Silicide formation
      • 6.4 Electrical contacts
      • 6.5 Conclusion and future trends
      • 6.6 Acknowledgments
    • 7: Disorder?order transformations in metallic films
      • Abstract
      • 7.1 Introduction
      • 7.2 The Fe-Pt system
      • 7.3 The A1 to L10 transformation in FePt
      • 7.4 Differential scanning calorimetry (DSC) studies of the A1 to L10 transformation in FePt
      • 7.5 The A1 to L10FePt transformation kinetics: the Johnson?Mehl?Avrami?Kolmogorov (JMAK) model
      • 7.6 The A1 to L10 transformation in FePt: the growth mechanism
      • 7.7 Derivation of expressions for the fraction transformed for three nucleation conditions
      • 7.8 The application of the JMAK expressions for the three nucleation conditions to the A1 to L10 phase transformation in FePt and related ternary alloy films
      • 7.9 Time?temperature?transformation (TTT) diagrams
      • 7.10 Fraction transformed and TTT diagrams for ultrathin films
      • 7.11 Conclusion
  • Part II: Properties of metallic films
    • 8: Metallic thin films: stresses and mechanical properties
      • Abstract
      • 8.1 Introduction
      • 8.2 Mechanics of thin films and substrates
      • 8.3 Measurement of stresses in thin films
      • 8.4 Physical origins of stresses in thin films
      • 8.5 Intrinsic stresses in vapor deposited polycrystalline films
      • 8.6 Evolution of stresses in films during processing
      • 8.7 Techniques for studying mechanical properties of thin films
      • 8.8 Mechanisms controlling strength and plasticity of thin films
      • 8.9 Conclusion
    • 9: Electron scattering in metallic thin films
      • Abstract
      • 9.1 Introduction
      • 9.2 Electrical conduction and the Boltzmann transport equation
      • 9.3 Quantitative resistivity size effect models
      • 9.4 Experimental review
      • 9.5 Conclusion
    • 10: Magnetic properties of metallic thin films
      • Abstract
      • 10.1 Introduction
      • 10.2 Magnetic properties
      • 10.3 Anisotropy in thin films
      • 10.4 Magnetization processes in thin films
      • 10.5 Measuring magnetic thin films
      • 10.6 Highly engineered materials
      • 10.7 Development of enhanced magnetic thin films
      • 10.8 Applications of magnetic thin films
      • 10.9 Non-metallic magnetic thin films
      • 10.10 Conclusion
    • 11: Optical properties of metallic films
      • Abstract
      • 11.1 Introduction
      • 11.2 The Drude and Sommerfeld models
      • 11.3 Deviations from the Drude?Sommerfeld model due to electronic band structure
      • 11.4 Optical properties of metallic thin films at infrared frequencies
      • 11.5 Optical skin effects in thin metallic films
      • 11.6 Experimental illustration of the skin effect
      • 11.7 Carrier transport in optical versus radio frequency regimes
      • 11.8 Surface-plasmon polaritons
      • 11.9 Metamaterials
      • 11.10 Nanoantenna infrared sensors
      • 11.11 Conclusion
    • 12: Thermal properties of metallic films
      • Abstract
      • 12.1 Introduction
      • 12.2 Thermal conductivity in metallic films and the Wiedemann?Franz law
      • 12.3 Experimental methods
      • 12.4 Results and theoretical analysis for thin films
      • 12.5 Conclusion
  • Index

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