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High Performance Silicon Imaging : Fundamentals and Applications of CMOS and CCD sensors

High Performance Silicon Imaging : Fundamentals and Applications of CMOS and CCD sensors (Hardcover)

Durini, Daniel (지은이)
Woodhead Publishing Ltd
434,370원

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High Performance Silicon Imaging : Fundamentals and Applications of CMOS and CCD sensors
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· 제목 : High Performance Silicon Imaging : Fundamentals and Applications of CMOS and CCD sensors (Hardcover) 
· 분류 : 외국도서 > 기술공학 > 기술공학 > 광학
· ISBN : 9780857095985
· 쪽수 : 450쪽
· 출판일 : 2014-05-12

목차

  • Contributor contact details
  • Woodhead Publishing Series in Electronic and Optical Materials
  • Part I: Fundamentals
    • 1. Fundamental principles of photosensing
      • Abstract:
      • 1.1 Introduction
      • 1.2 The human vision system
      • 1.3 Photometry and radiometry
      • 1.4 History of photosensing
      • 1.5 Early developments in photodetector technology
      • 1.6 References
    • 2. Operational principles of silicon image sensors
      • Abstract:
      • 2.1 Introduction
      • 2.2 Silicon phototransduction
      • 2.3 Principles of charged coupled device (CCD) and complementary metal-oxide-semiconductor (CMOS) photosensing technologies
      • 2.4 Metal-oxide-semiconductor-capacitor (MOS-C) structure-based photodetectors
      • 2.5 p-n junction-based photodetectors
      • 2.6 Noise considerations in pixel structures
      • 2.7 High-performance pixel structures
      • 2.8 Miniaturization and other development strategies followed in image sensor technologies
      • 2.9 Hybrid and 3D detector technologies
      • 2.10 Conclusion
      • 2.11 References
    • 3. Charge coupled device (CCD) image sensors
      • Abstract:
      • 3.1 Introduction
      • 3.2 Charge coupled device (CCD) design, architecture and operation
      • 3.3 Illumination modes
      • 3.4 Imaging parameters and their characterization
      • 3.5 Conclusion and future trends
      • 3.6 References
    • 4. Backside illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) image sensors
      • Abstract:
      • 4.1 Introduction
      • 4.2 Challenges facing a scaled-down frontside illuminated (FSI) sensor
      • 4.3 Basics of backside illuminated (BSI) sensor process integration
      • 4.4 Interface solutions to BSI sensors
      • 4.5 Conclusion
      • 4.6 References
    • 5. Circuits for high performance complementary metal-oxide-semiconductor (CMOS) image sensors
      • Abstract:
      • 5.1 Introduction
      • 5.2 High resolution image sensors
      • 5.3 Low noise complementary metal-oxide-semiconductor (CMOS) image sensors
      • 5.4 High speed image sensors
      • 5.5 Low power image sensors
      • 5.6 Wide dynamic range sensors
      • 5.7 Other high performance designs
      • 5.8 Conclusion
      • 5.9 References
    • 6. Smart cameras on a chip: using complementary metal-oxide-semiconductor (CMOS) image sensors to create smart vision chips
      • Abstract:
      • 6.1 Introduction
      • 6.2 The concept of a smart camera on a chip
      • 6.3 The development of vision chip technology
      • 6.4 From special-purpose chips to smart computational chips
      • 6.5 From video rate applications to high-speed image processing chips
      • 6.6 Future trends
      • 6.7 Conclusion
      • 6.8 References
  • Part II: Applications
    • 7. Complementary metal-oxide-semiconductor (CMOS) image sensors for mobile devices
      • Abstract:
      • 7.1 Introduction
      • 7.2 Core image/video capture technology requirements and advances in mobile applications
      • 7.3 Emerging complementary metal-oxide-semiconductor (CMOS) ‘sensor-embedded’ technologies
      • 7.4 Mobile image sensor architecture and product considerations
      • 7.5 Future trends
      • 7.6 Conclusion
      • 7.7 References
    • 8. Complementary metal-oxide-semiconductor (CMOS) image sensors for automotive applications
      • Abstract:
      • 8.1 Automotive applications
      • 8.2 Vision systems
      • 8.3 Sensing systems
      • 8.4 Requirements for automotive image sensors
      • 8.5 Future trends
      • 8.6 References
    • 9. Complementary metal-oxide-semiconductor (CMOS) image sensors for use in space
      • Abstract:
      • 9.1 Introduction
      • 9.2 General requirements for use of complementary metal-oxide-semiconductor (CMOS) sensors in space
      • 9.3 Comparison of CMOS sensors and charge coupled devices (CCDs) for space applications
      • 9.4 CMOS sensors for space applications
      • 9.5 References
    • 10. Complementary metal-oxide-semiconductor (CMOS) sensors for high-performance scientific imaging
      • Abstract:
      • 10.1 Introduction
      • 10.2 Detection in silicon
      • 10.3 Complementary metal-oxide-semiconductor (CMOS) sensors for the detection of charged particles
      • 10.4 CMOS sensors for X-ray detection
      • 10.5 Future trends
      • 10.6 Sources of further information and advice
      • 10.7 References
    • 11. Complementary metal-oxide-semiconductor (CMOS) sensors for fluorescence lifetime imaging (FLIM)
      • Abstract:
      • 11.1 Introduction
      • 11.2 Fluorescence lifetime imaging (FLIM)
      • 11.3 Complementary metal-oxide-semiconductor (CMOS) detectors and pixels
      • 11.4 FLIM system-on-chip
      • 11.5 Future trends
      • 11.6 Sources of further information and advice
      • 11.7 References
    • 12. Complementary metal-oxide-semiconductor (CMOS) X-ray sensors
      • Abstract:
      • 12.1 Introduction
      • 12.2 Intra-oral and extra-oral dental X-ray imaging
      • 12.3 Medical radiography, fluoroscopy and mammography
      • 12.4 CMOS image sensor (CIS)-based flat panel display (FPD) technology
      • 12.5 Pixel design considerations for CMOS-based FPDs
      • 12.6 Key parameters for X-ray sensors
      • 12.7 X-ray sensors: types and requirements
      • 12.8 Direct X-ray sensors
      • 12.9 Conclusion and future trends
      • 12.10 References
    • 13. Complementary metal-oxide-semiconductor (CMOS) and charge coupled device (CCD) image sensors in high-definition TV imaging
      • Abstract:
      • 13.1 Introduction
      • 13.2 Broadcast camera performance
      • 13.3 Modulation transfer function (MTF), aliasing and resolution
      • 13.4 Aliasing and optical low pass filtering
      • 13.5 Opto-electrical matching and other parameters
      • 13.6 Standards for describing the performance of broadcast cameras
      • 13.7 Charge coupled device (CCD) and complementary metal-oxide-semiconductor (CMOS) image sensors used in broadcast cameras
      • 13.8 Signal-to-noise ratio (SNR)
      • 13.9 Bit size, pixel count and other issues
      • 13.10 Three-dimensional and ultra high-defi nition (UHD) television
      • 13.11 Conclusion
      • 13.12 Sources of further information and advice
      • 13.13 References
    • 14. High-performance silicon imagers and their applications in astrophysics, medicine and other fields
      • Abstract:
      • 14.1 Introduction
      • 14.2 Solid-state imaging detectors: principles of operation
      • 14.3 Scientific imaging detectors
      • 14.4 Readout structures
      • 14.5 Photon counting detectors
      • 14.7 Planetary and astronomy applications
      • 14.8 Commercial applications of high-performance imaging detectors
      • 14.9 Brief note on biological and medical applications
      • 14.10 References and further reading
  • Index

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