Technology Computer Aided Design : Simulation for VLSI MOSFET (Paperback)

Introduction to Technology CADBy Prof. Samar SahaTechnology CADA Brief History of TCADMotivation for TCADTCAD Flow for IC Process and Device SimulationTCAD ApplicationBenefit of TCAD in TD ProjectSummaryBasic Semiconductor and MOS PhysicsBy Prof. Swapnadip DeIntroductionBand Formation theory of semi conductorConcept of effective massBasic Semiconductor EquationsCarrier TransportCarrier recombination and generationContinuity Equation and solutionMobility & ScatteringDifferent Distribution lawsSemiconductor device modelingIntroduction to MOS TransistorStructure & symbol of MOSFETBasic Operation of MOSFETThreshold Voltage of MOSFETFlat-band voltage: Effect of real surfacesExpression of Threshold voltageI-V characteristics of MOSFETDepletion MOSFETTrans-conductanceChannel Length ModulationSubstrate Bias EffectsMOS Transistor as a SwitchMOSFET CapacitanceMoore’s lawIntroduction to scalingConstant Field ScalingConstant Voltage ScalingWhy constant voltage scaling is more useful than constant field scaling?ITRS roadmap for semiconductorsDifferent groups of MOSFETsShort-Channel Effects of MOSFETReduction of the effective threshold voltageHot Electron effectsAvalanche breakdown and parasitic bipolar actionDIBL (Drain Induced Barrier Lowering)Velocity saturation in MOSFETMobility DegradationReferencesReview of Numerical Methods for TCADBy Kalyan KoleyIntroductionNumerical Solution MethodsNonlinear IterationConvergence criteria for Non-linear IterationsInitial Guess RequirementNumerical method implementation Basic Drift Diffusion Calculations Drift Diffusion Calculations with Lattice HeatingEnergy Balance Calculations Energy Balance Calculations with Lattice Heating Setting the Number of CarriersImportant Parameters of the METHOD Statement Restrictions on the Choice of METHODPisces-II CompatibilityDevice Simulation Using ISE-TCADBy Prof. N.MohankumarIntroductionDesign FlowSentaurus Structure EditorSentaurus DeviceTecplotInspectParameterized ScriptingSentaurus WorkbenchSummaryReferencesDevice Simulation Using Silvaco ATLAS ToolBy Prof. Angsuman SarkarIntroduction How the device simulator ATLAS worksATLAS Inputs and OutputsSimulation set upBrief review of electro-physical models employed in ATLASChoice of METHOD in ATLASMobility models in ATLASBenchmarking of MOSFET simulationsImportance of mesh optimization Introduction to other tools from Silvaco used in conjunction with ATLASExample 1: Bulk n-channel MOSFET simulation Example 2: SOI MOSFET simulation Example 3: 0.18μm Bulk nMOS transistor with Halo implantExample 4: Volume inversion Double-Gate (DG) MOSFET SummaryReferencesStudy of Deep Submicron VLSI MOSFETs through TCADBy Prof. Srabanti PanditIntroductionSynopsys TCAD Tool SuiteDevice Architecture and Simulation Set-upShort Channel Effects (SCEs)Drain Induced Barrier Lowering (DIBL)Mobility DegradationDrain CharacteristicsVelocity saturationOutput ResistanceInverse Narrow Width Effects (INWEs)Advanced Device StructuresConclusionMOSFET Characterization for VLSI Circuit Simulation By Prof. Soumya PanditIntroductionDevice Models for Circuit SimulationThreshold Voltage CharacterizationI-V CharacterizationHot Carrier Effects due to Impact IonizationCharacterization of Gate DielectricCapacitance CharacterizationNoise CharacterizationStatistical CharacterizationClassification of Process VariabilitySources of Random Intra-die Process Variations and their EffectsRandom Discrete Dopant (RDD)Line Edge Roughness (LER)Oxide Thickness Variations (OTV)Characterization of Process VariabilityDesign corner approachMonte Carlo simulation approachStatistical Corner approachSimulation Results and DiscussionStatistical Characterization of RDDStatistical Characterization of LERStatistical Characterization of OTVStatistical Characterization of Simultaneous VariationsSummary and ConclusionProcess Simulation of a MOSFET using TSUPREM-4 and MEDICIBy Prof. Atanu KunduIntroductionWhy silicon?Initial meshing the waferStart material initializationDefining the initial meshN-buried layerOxidation and growth the initial oxideMeshing the wafer for buried layer implantationScreen oxidationBuried layer implantBuried layer drive-inP-Type epitaxial growthPad oxide formationGate under channel dopingGate oxide formationGate-poly depositionPolysilicon gate dopingGate-poly maskCreation of n+ source and drain regionsCreation of p+ regionBPSG depositionBPSG annealContact maskMetal- DepositionMetal- MaskIntermetal dielectric (IMD) depositionMetal maskMetal- depositionMetal- final maskMOSFET.inpMask file named t.tl1What is MEDICIExecution of commandInterfacing between TSUPREM4 and MEDICIRename electrodes from TSUPREM4 to standard namesMajor physical modelsInitial guess/Convergence and Solution MethodsNonlinear system solutions and current-voltage analysisPost processing and parameter extractionDrain current vs. drain voltage simulationDrain current vs. gate voltage simulationConclusionReferences