Handbook for III-V High Electron Mobility Transistor Technologies (Hardcover, 1)

CHAPTER-1-MOTIVATION BEHIND THE HIGH ELECTRON MOBILITY TRANSISTORS

1. INTRODUCTION
2. CURRENT AND FUTURE DEVICE TECHNOLOGIES
3. ADVANCED MMIC AND TMIC TECHNOLOGIES
4. SUBMILLIMETRE WAVE APPLICATIONS
5. TERAHERTZ APPLICATIONS
6. TRANSISTOR TECHNOLOGY FOR 4G/5G COMMUNICATIONS
7. NEED FOR ENHANCING THE DATA CAPACITY OF ADVANCED WIRELESS COMMUNICATIONS
8. SPACE APPLICATIONS
9. DEFENCE APPLICATIONS
10. MEDICAL AND MILLITARY APPLICATIONS

1. HISTORY AND BACKGROUND OF HEMTS
2. BASIC STRUCTURE OF HEMTS
3. PRINCIPLE OF OPERATION OF HEMTS
4. MODULATION DOPING AND 2DEG
5. HEMT MATERIAL SYSTEMS
6. CLASSIFICATION OF HEMTS

1. III-V COMPOUND SEMICONDUCTORS
2. PHYSICAL PROPERTIES OF III-V COMPOUND SEMICONDUCTORS
3. ELECTRICAL PROPERTIES OF III-V COMPOUND SEMICONDUCTORS
4. MECHANICAL PROPERTIES OF III-V COMPOUND SEMICONDUCTORS
5. OPTICAL PROPERTIES OF III-V COMPOUND SEMICONDUCTORS
6. III-V HETEROSTRUCTURE
7. INTERFACE QUALITY AND EFFECTS OF TRAP DENSITY
8. GATE MATERIALS AND STRUCTURES
9. SOURCE/DRAIN CONTACT MATERIALS
10. SELF ALIGNED PROCESS
11. MOLECULAR BEAM EPITAXY
12. CHEMICAL VAPOUR DEPOSITION
13. METAL ORGANIC CHEMICAL VAPOUR DEPOSITION

1. HEMT SMALL SIGNAL MODEL
2. PARASITIC RESISTANCES IN HEMTS
3. PARASITIC CAPACITANCES IN HEMTS
4. SOURCE/DRAIN ENGINEERING
5. GATE ENGINEERING
6. CHANNEL ENGINEERING
7. CHANNEL RESISTANCE

1. GENERAL STRUCTURE OF AlGaN/GaN HEMTS
2. IMPACT OF BACK BARRIER
3. DC AND RF CHARACTERISTICS
4. BREAKDOWN CHARACTERISTICS
5. SMALL SIGNAL EQUIVALENT CIRCUIT

1. DEVICE DESIGN PROCESS
2. DEVICE PROCESSING
3. LITHOGRAPHY
4. METALLIZATION AND ANNEALING
5. DRY ETCHING
6. FLOURINATION

1. INTRODUCTION
2.  AlInSb/InSb HEMT DEVICE STRUCTURE
3. AlInSb/InSb HEMT ANALYTICAL MODELING OF CHANNEL POTENTIAL
4. AlInSb/InSb HEMT ANALYTICAL MODELING THRESHOLD VOLTAGE AND SUBTHRESHOLD CURRENT
5. AlInSb/InSb HEMT ANALYTICAL MODELING OFCHARGE DENSITY AND FERMILEVEL
6. AlInSb/InSb HEMT SCALE LENGTH MODELING WITH EFFECTIVE CONDUCTING PATH EFFECT
7. GATE ENGINEERED HIGH ELECTRON MOBILITY TRANSISTORS
8. DEVICE STRUCTURE OF AlInSb/InSb TMG HEMT
9.  ANALYTICAL MODELING OF CHANNEL POTENTIAL FOR AlInSb/InSbTMG HEMT
10.  ANALYTICAL MODELING THRESHOLD VOLTAGE AND SUBTHRESHOLD CURRENT FOR AlInSb/InSbTMG HEMT

1. POLARIZATION IN AlGaN/GaN HEMT
2. PIEZOELECTRIC POLARIZATION
3. SPONTANEOUS POLARIZATION
4. POLARIZATION INDUCED AlGaN/GaN HEMTs
5. POLARIZATION INDUCED EFFECTS IN AlGaN/GaN HEMTs
6. EFFECT OF POLARIZATION ON 2DEG OF AlGaN/GaN HEMTs

1. INTRODUCTION
2. ORIGIN AND PROPERTIES OF INTERFACE AND NEAR INTERFACIAL TRAPS
3. PROPERTIES AND INFLUENCE OF SURFACE TRAPS
4. PROPERTIES AND INFLUENCE OF BULK TRAPS
5. EFFECT OF TEMPERATURE ON TRAPS IN AlGaN/GaN HEMT
6. IMPACT OF TRAPS IN AlGaN/GaN HEMT

1. SMALL SIGNAL EQUIVALENT CIRCUIT
2. 2DEG MODELING OF AlGaN/GaN HEMT
3. DRAIN CURRENT MODELING OF AlGaN/GaN HEMT
4. SIMULATION OF DC PARAMETERS
5. ANALYSIS OF RF PERFORMANCE

1. EFFECT OF PASSIVATION
2. FIELD PLATE TECHNIQUES
3. ASYMMETRIC AlGaN/GaN HEMTS FOR HIGH POWER APPLICATIONS
4. METHODES TO REDUCE PARASITICS
5. SCALABILITY

1. InP/InAlAs/InGaAs HEMT STRUCTURE
2. PHYSICS OF InP/InAlAs/InGaAs HEMT
3. BURIED PLATINUM TECHNOLOGY
4. DOUBLE DELTA DOPING TECHNOLOGY
5. DC, RF AND BREAKDOWN VOLATEG CHARACTERISTICS
6. SCALABILITY
7. KINK EFFECTS
8. SHORT CHANNEL EFFECTS
9. APPLICATIONS OF InP/InAlAs/InGaAs HEMTS

1. INTRODUCTION
2. BACKGROUND
3. MATERIALS AND METHODS (PREPARATION OF GaN AND AlGaN )
4. RESULTS
5. CONCLUSIONS

1. INTRODUCTION TO MHEMT TECHNOLOGY
2. GaAs MHEMT FOR SUBMILLIMETRE WAVE APPLICATIONS
3. ASYMMETRIC MHEMT FOR HIGH POWER APPLICATIONS
4. DC AND RF CHARACTERISTICS
5. APPLICATIONS OF MHEMTs

1. MOSHEMT STRUCTURE
2. MOSHEMT MATERIAL SYSTEMS
3. DC & RF CHARACETRISTICS OF MOSHEMT
4. HIGH-K DIELECTRICS FOR MOSHEMT
5. ADVANTAGES OF MOSHEMT

CHAPTER-16-DOUBLE GATE HIGH ELECTRON MOBILITY TRANSISTORS

1. AlGaN/GaN DG-HEMT STRUCTURE
2. AlGaN/GaN DC & RF CHARACTERISTICS
3. InGaAs/InAs DG-HEMT STRUCTURE
4. InGaAs/InAs DG-HEMT DC & RF CHARACTERISTICS
5. PARASITICS IN DG-HEMT