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The Piezojunction Effect in Silicon Integrated Circuits and Sensors

The Piezojunction Effect in Silicon Integrated Circuits and Sensors (Hardcover, 2002)

Gerard C. M. Meijer, Fabiano Fruett (지은이)
  |  
Kluwer Academic Pub
2002-05-31
  |  
181,230원

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The Piezojunction Effect in Silicon Integrated Circuits and Sensors

책 정보

· 제목 : The Piezojunction Effect in Silicon Integrated Circuits and Sensors (Hardcover, 2002) 
· 분류 : 외국도서 > 기술공학 > 기술공학 > 전자공학 > 회로
· ISBN : 9781402070532
· 쪽수 : 162쪽

목차

1: Introduction. 1.1. Previous research on the piezojunction effect. 1.2. Mechanical stress and its influence in accuracy. 1.3. New stress-sensing circuits. 1.4. Motivation and objectives. 1.5. Book structure. 2: Mechanical stress in integrated circuits. 2.1. Introduction. 2.2. Mechanical properties of crystalline silicon. 2.3. Mechanical stress. 2.4. Strain. 2.5. Silicon crystal orientation. 2.6. Elastic properties of silicon. 2.7. Origin of mechanical stress in a silicon die. 2.8. Mechanical stress conditions to characterize microelectronic circuits. 3: Piezo effects in silicon. 3.1. Introduction. 3.2. An overview about the piezo effects in silicon. 3.3. Review of the piezoresistive theory of silicon. 3.4. Piezojunction effect. 4: Characterization of the piezojunction effect. 4.1. Introduction. 4.2. Vertical transistors. 4.3. Lateral transistors. 4.4. Summary of the piezojunction coefficients. 4.5. Conclusions. 5: Minimizing the piezojunction and piezoresistive effects in integrated devices. 5.1 Introduction. 5.2. Vertical transistors. 5.3. Lateral transistors. 5.4. Resistors. 5.5. Conclusions. 6: Minimizing the inaccuracy in packaged integrated circuits. 6.1. Introduction. 6.2. Translinear circuits. 6.3. Translinear circuits with resistors. 6.4. Bandgap references and temperature transducers. 7: Stress-sensing elements based on the piezojunction effect. 7.1. Introduction. 7.2. Stress-sensing elements based on the piezoresistive effect. 7.3. Stress-sensing elements based on the piezojunction effect. 7.4. Comparison between the piezojunction effect and the piezoresistive effect for stress-sensing applications. 7.5. Maximizing the piezojunction effect in L-PNP transistors. 7.6. Stress-sensing element based on the L-PNP current mirror. 7.7. Conclusions. 8: Conclusions. Appendix: A. Transformation of coordinate system. B. Stress calculations based on the cantilever technique. C. Transformation of coordinate system for the second-order piezoresistive coefficients. D. MatLab program used to calculate the stress-induced in change in V BE and V ref. List of symbols. Index

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