SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices (Hardcover)

Contents
Introduction
The Big Picture; J.D. Cressler
A Brief History of the Field; J.D. Cressler
SiGe and Si Strained-Layer Epitaxy
Overview: SiGe and Si Strained-Layer Epitaxy; J.D. Cressler
Strained SiGe and Si Epitaxy; B. Tillack and P. Zaumseil
Si/SiGe(C) Eptiaxy by RTCVD; D. Dutartre, F. Deleglise, C. Fellous, L. Rubaldo, and A. Talbot
MBE Growth Techniques; M. Oehme and E. Kasper
UHV/CVD Growth Techniques; T.N. Adam
Defects and Diffusion in SiGe and Strained Si; A.R. Peaker and V. Markevich
Stability Constraints in SiGe Epitaxy; A. Fischer
Electronic Properties of Strained Si/SiGe and Si_1?yC_y Alloys; J.L. Hoyt
Carbon Doping of SiGe; H.J. Osten
Contact Metallization on Silicon?Germanium; C.K. Maiti
Selective Etching Techniques for SiGe/Si; S. Monfray, S. Borel, and T. Skotnicki
Appendices
Properties of Silicon and Germanium; J.D. Cressler
The Generalized Moll-Ross Relations; J.D. Cressler
Integral Charge-Control Relations; M. Schroter
Sample SiGe HBT Compact Model Parameters; R.M. Malladi
Index