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Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design

Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design (Hardcover)

(CAD Techniques for High Level Modeling and Design)

Amit Patra, Soumya Pandit, Chittaranjan Mandal (지은이)
Taylor & Francis
382,000원

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Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design
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· 제목 : Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design (Hardcover) (CAD Techniques for High Level Modeling and Design)
· 분류 : 외국도서 > 기술공학 > 기술공학 > 나노테크놀리지/MEMS
· ISBN : 9781466564268
· 쪽수 : 408쪽
· 출판일 : 2014-02-20

목차

    Introduction

    Introduction

    Characterization of Technology Scaling

    Analog Design Challenges in Scaled CMOS Technology

    Motivation for CAD Techniques

    Conventional Design Techniques for Analog IC Design

    Knowledge-based CAD Technique for Analog ICs

    Summary and Conclusion

    High-Level Modeling and Design Techniques

    Introduction

    High-Level Model

    Behavioral Model Generation Technique

    Introduction to Optimization Techniques

    Some Important Optimization Algorithms

    Multi-Objective Optimization Method

    Pareto Optimal Front

    Design Space Exploration

    Computational Complexity of a CAD Algorithm

    Technology aware Computer Aided IC Design Technique

    Commercial Design Tools

    Modeling of Scaled MOS Transistor for VLSI Circuit Simulation

    Introduction

    Device Modeling

    Compact Models

    Long-Channel MOS Transistor

    Threshold Voltage Model for Long-channel Transistor with Uniform Doping

    SPICE Level Drain Current Model

    SPICE Level I-V Model

    MOSFET Capacitances

    Short-Channel MOS Transistor

    Threshold Voltage for Short-Channel MOS Transistor

    I-V Model for Short-Channel MOS transistor

    Weak Inversion Characteristics of a Scaled MOS transistor

    Hot Carrier Effect

    Source-Drain Resistance Model

    Compact Modeling

    Salicide Technology

    Physical Model for Output Resistance

    Poly-silicon Gate Depletion Effect

    Effective Channel Length and Width

    Summary and Conclusion

    Performance and Feasibility Model Generation using Learning based Approach

    Introduction

    Requirement of Leaning-based Approaches

    Regression Problem for Performance Model Generation

    Some Related Works

    Preliminaries on Artificial Neural Network

    Neural Network Model Development

    Case Study 1: Performance Modeling of CMOS Inverter

    Case Study 2: Performance Modeling of Spiral Inductor

    Dynamic Adaptive Sampling

    Introduction to Least Squares Support Vector Machines

    Feasible Design Space and Feasibility Model

    Case Study 3: Combined Feasibility and Performance Modeling of Two-Stage Operational Amplifier

    Case Study 4: Architecture-Level Performance Modeling of Analog Systems

    Meet-in-the-Middle Approach for Construction of Architecture-Level Feasible Design Space

    Case Study 5: Construction of FeasibilityModel at Architecturelevel of an Interface Electronics for MEMS Capacitive Accelerometer System

    Summary and Conclusion

    Circuit Sizing and Specification Translation

    Introduction

    Circuit Sizing as a Design Space Exploration Problem

    Particle Swarm Optimization Algorithm (PSO)

    Case Study 1: Design of a Two Stage Miller OTA

    Case Study 2: Synthesis of On-chip Spiral Inductors

    Case Study 3: Design of a nano-scale CMOS inverter for Symmetric Switching Characteristics

    The gm/ID Methodology for Low Power Design

    High-Level Specification Translation

    Summary and Conclusion

    Advanced Effects of Scaled MOS Transistors

    Introduction

    Narrow Width Effect on Threshold Voltage

    Channel Engineering of MOS Transistor

    Gate Leakage Current

    High-κ Dielectrics and Metal-Gate/High-κ CMOS Technology

    Advanced Device Structures of MOS Transistors

    Noise Characterization of MOS Transistors

    Gate Resistance and Substrate Network Model of MOS Transistor for RF Applications

    Summary and Conclusion

    Process Variability and Reliability of Nano-scale CMOS Analog Circuits

    Introduction

    Basic Concepts on Yield and Reliability

    Sources of Variations in Nanometer Scale Technology

    Systematic Process Variations

    Random Process Variations

    Statistical Modeling

    Physical Phenomena Affecting the Reliability of Scaled MOS

    Transistor

    Physical Model for MOSFET Degradation due to HCI

    Reaction-Diffusion Model for NBTI

    Reliability Simulation for Analog Circuits

    Summary and Conclusion

    Bibliography

    저자소개

    Amit Patra (지은이)    정보 더보기
    펼치기
    Chittaranjan Mandal (지은이)    정보 더보기
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