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· 분류 : 외국도서 > 기술공학 > 기술공학 > 전자공학 > 마이크로 일렉트로닉스
· ISBN : 9781482220032
· 쪽수 : 388쪽
· 출판일 : 2015-10-16
목차
GaN High-Voltage Power Devices
Joachim Wurfl
AlGaN/GaN High-Electron-Mobility Transistors Grown by Ammonia Source Molecular Beam Epitaxy
Yvon Cordier
Gallium Nitride Transistors on Large-Diameter Si (111) Substrate
Subramaniam Arulkumaran and Geok Ing Ng
GaN-HEMT Scaling Technologies for High-Frequency RF and Mixed Signal Applications
Keisuke Shinohara
Group III?Nitride Microwave Monolithically Integrated Circuits
Rudiger Quay
GaN-Based Metal/Insulator/Semiconductor-Type Schottky Hydrogen Sensors
Ching-Ting Lee, Hsin-Ying Lee and Li-Ren Lou
InGaN-Based Solar Cells
Ezgi Dogmus and Farid Medjdoub
III-Nitride Semiconductors: New Infrared Intersubband Technologies
M Beeler and E Monroy
Gallium Nitride?Based Interband Tunnel Junctions
Siddharth Rajan, Sriram Krishnamoorthy and Fatih Akyol
Trapping and Degradation Mechanisms in GaN-Based HEMTs
Matteo Meneghini, Gaudenzio Meneghesso and Enrico Zanoni














