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· 제목 : Principles of Lithography (Hardcover, 4th)
· 분류 : 외국도서 > 기술공학 > 기술공학 > 광학
· ISBN : 9781510627604
· 쪽수 : 630쪽
· 출판일 : 2019-05-24
· 분류 : 외국도서 > 기술공학 > 기술공학 > 광학
· ISBN : 9781510627604
· 쪽수 : 630쪽
· 출판일 : 2019-05-24
목차
- Chapter 1 Overview of Lithography
- Problems
- Chapter 2 Optical Pattern Formation
- 2.1 The Problem of Imaging
- 2.2 Aerial Images
- 2.3 The Contributions of Physics and Chemistry
- 2.4 Focus
- Problems
- References
- Chapter 3 Photoresists
- 3.1 Positive and Negative Resists
- 3.2 Adhesion Promotion
- 3.3 Resist Spin Coating, Softbake, and Hardbake
- 3.4 Photochemistry of Novolak/DNQ g- and i-line Resists
- 3.5 Acid-Catalyzed DUV Resists
- 3.6 Development and Post-Exposure Bakes
- 3.7 Operational Characterization
- 3.8 Line-Edge Roughness
- 3.9 Multilayer Resist Processes
- Problems
- References
- Chapter 4 Modeling and Thin-Film Effects
- 4.1 Models of Optical Imaging
- 4.2 Aberrations
- 4.3 Modeling Photochemical Reactions
- 4.4 Thin-Film Optical Effects
- 4.5 Post-Exposure Bakes
- 4.6 Methods for Addressing the Problems of Reflective Substrates
- 4.7 Development
- 4.8 Quantum Effects and Modeling
- 4.9 Summary of Modeling
- Problems
- References
- Chapter 5 Wafer Steppers and Scanners
- 5.1 Overview
- 5.2 Light Sources
- 5.3 Illumination Systems
- 5.4 Reduction Lenses
- 5.5 Autofocus Systems
- 5.6 The Wafer Stage
- 5.7 Scanning
- 5.8 Dual-Stage Exposure Tools
- 5.9 Lithography Exposure Tools before Steppers
- Problems
- References
- Chapter 6 Overlay
- 6.1 Alignment Systems
- 6.1.1 Classification of alignment systems
- 6.1.2 Optical methods for alignment and wafer-to-reticle referencing
- 6.1.3 Number of alignment marks
- 6.2 Overlay Models
- 6.3 Matching
- 6.4 Process-Dependent Overlay Effects
- Problems
- References
- Chapter 7 Masks and Reticles
- 7.1 Overview
- 7.2 Mask Blanks
- 7.3 Mechanical Optical-Pattern Generators
- 7.4 Electron-Beam Lithography and Single-Beam Mask Writers
- 7.5 Multi-Electron-Beam Mask Writers
- 7.6 Optical Mask Writers
- 7.7 Resists for Mask Making
- 7.8 Etching
- 7.9 Pellicles
- 7.10 Mask-Defect Inspection and Repair
- Problems
- References
- Chapter 8 Confronting the Diffraction Limit
- 8.1 Off-Axis Illumination
- 8.2 Optical Proximity Effects
- 8.3 The Mask-Error Enhancement Factor (MEEF)
- 8.4 Phase-Shifting Masks
- 8.5 Putting It All Together
- Problems
- References
- Chapter 9 Metrology
- 9.1 Linewidth Measurement
- 9.1.1 Linewidth measurement using scanning electron microscopes
- 9.1.2 Scatterometry
- 9.1.3 Electrical linewidth measurement
- 9.2 Measurement of Overlay
- Problems
- References
- Chapter 10 Immersion Lithography and the Limits of Optical Lithography
- 10.1 Immersion Lithography
- 10.2 The Diffraction Limit
- 10.3 Improvements in Optics
- 10.4 Maximum Numerical Aperture
- 10.5 The Shortest Wavelength
- 10.6 Improved Photoresists
- 10.7 Flatter Wafers
- 10.8 How Low Can k1 Go?
- 10.9 How Far Can Optical Lithography Be Extended?
- 10.10 Multiple Patterning
- 10.11 Interferometric Lithography
- Problems
- References
- Chapter 11 Lithography Costs
- 11.1 Cost-of-Ownership
- 11.1.1 Capital costs
- 11.1.2 Consumables
- 11.1.3 Mask costs
- 11.1.4 Rework
- 11.1.5 Metrology
- 11.1.6 Maintenance costs
- 11.1.7 Labor costs
- 11.1.8 Facilities costs
- 11.2 Mix-and-Match Strategies
- Problems
- References
- Chapter 12 Extreme Ultraviolet Lithography
- 12.1 Background and Multilayer Reflectors
- 12.2 EUV Lithography System Overview
- 12.3 EUV Masks
- 12.4 Sources and Illuminators
- 12.5 EUV Optics
- 12.6 EUV Resists
- Problems
- References
- Chapter 13 Alternative Lithography Techniques
- 13.1 Proximity X-ray Lithography
- 13.2 Electron-Beam Direct-Write Lithography
- 13.2.1 Single-beam direct-write systems
- 13.2.2 Multiple-electron-beam direct-write systems
- 13.2.3 Cell-projection lithography
- 13.2.4 Scattering-mask electron-projection lithography
- 13.3 Ion-Projection Lithography
- 13.4 Imprint Lithography
- 13.5 Directed Self-Assembly
- Problems
- References
- Appendix A Coherence
- Problems
- References
