Nitride Semiconductors and Devices (Hardcover, 1999)

1. Introduction.- 2. General Properties of Nitrides.- 2.1 Crystal Structure of Nitrides.- 2.2 Gallium Nitride.- 2.2.1 Chemical Properties of GaN.- 2.2.2 Thermal and Mechanical Properties of GaN.- 2.3 Aluminum Nitride.- 2.3.1 Thermal and Chemical Properties of AlN.- 2.3.2 Mechanical Properties of AlN..- 2.3.3 Electrical Properties of AlN.- 2.3.4 Optical Properties of AlN.- 2.4 Indium Nitride.- 2.4.1 Crystal Structure of InN.- 2.4.2 Mechanical and Thermal Properties of InN.- 2.4.3 Electrical Properties of InN.- 2.4.4 Optical Properties of InN.- 2.5 Ternary and Quaternary Alloys.- 2.5.1 AlGaN Alloy.- 2.5.2 InGaN Alloy.- 2.5.3 InAIN Alloy.- 2.6 Substrates for Nitride Epitaxy.- 2A Appendix: Fundamental Data for Nitride Systems.- 3. Electronic Band Structure of Bulk and QW Nitrides.- 3.1 Band-Structure Calculations.- 3.2 Effect of Strain on the Band Structure of GaN.- 3.3 k·p Theory and the Quasi-Cubic Model.- 3.4 Quasi-Cubic Approximation.- 3.5 Confined States.- 3.6 Conduction Band.- 3.7 Valence Band.- 3.8 Exciton Binding Energy in Quantum Wells.- 3.9 Polarization Effects.- 3A Appendix.- 4. Growth of Nitride Semiconductors.- 4.1 Bulk Growth.- 4.2 Substrates Used.- 4.2.1 Conventional Substrates.- 4.2.2 Compliant Substrates.- 4.2.3 Van der Waals Substrates.- 4.3 Substrate Preparation.- 4.4 Substrate Temperature.- 4.5 Epitaxial Relationship to Sapphire.- 4.6 Growth by Hydride Vapor Phase Epitaxy (HVPE).- 4.7 Growth by OMVPE (MOCVD).- 4.7.1 Sources.- 4.7.2 Buffer Layers.- 4.7.3 Lateral Growth.- 4.7.4 Growth on Spinel (MgAl2O4).- 4.8 Molecular Beam Epitaxy.- 4.8.1 MBE Growth Systems.- 4.8.2 Plasma-Enhanced MBE.- 4.8.3 Reactive-Ion MBE.- 4.8.4 Reactive MBE.- 4.8.5 Modeling of the MBE-Like Growth.- 4.9 Growth on 6H-SiC (0001).- 4.10 Growth on ZnO.- 4.11 Growth on GaN.- 4.12 Growth of p-Type GaN.- 4.13 Growth of n-Type InN.- 4.14 Growth of n-Type Ternary and Quaternary Alloys.- 4.15 Growth of p-Type Ternary and Quaternary Alloys.- 4.16 Critical Thickness.- 5. Defects and Doping.- 5.1 Dislocations.- 5.2 Stacking-Fault Defects.- 5.3 Point Defects and Autodoping.- 5.3.1 Vacancies, Antisites and Interstitials.- 5.3.2 Role of Impurities and Hydrogen.- 5.3.3 Optical Signature of Defects in GaN.- 5.4 Intentional Doping.- 5.4.1 n-Type Doping with Silicon, Germanium and Selenium.- 5.4.2 p-Type Doping.- a) Doping with Mg.- 5.4.3 Optical Manifestation of Group-II Dopant-Induced Defects in GaN.- a) Doping with Beryllium.- b) Doping with Mercury.- c) Doping with Carbon.- d) Doping with Zinc.- e) Doping with Calcium.- f) Doping with Rare Earths.- 5.4.4 Ion Implantation and Diffusion.- 5.5 Defect Analysis by Deep-Level Transient Spectroscopy.- 5.6 Summary.- 6. Metal Contacts to GaN.- 6.1 A Primer for Semiconductor-Metal Contacts.- 6.2 Current Flow in Metal-Semiconductor Junctions.- 6.2.1 The Regime Dominated by Thermionic Emission.- 6.2.2 Thermionic Field-Emission Regime.- 6.2.3 Direct Tunneling Regime.- 6.2.4 Leakage Current.- 6.2.5 The Case of a Forward-Biased p-n Junction.- 6.3 Resistance of an Ohmic Contact.- 6.3.1 Specific Contact Resistivity.- 6.3.2 Semiconductor Resistance.- 6.4 Determination of the Contact Resistivity.- 6.5 Ohmic Contacts to GaN.- 6.5.1 Non-Alloyed Ohmic Contacts.- 6.5.2 Alloyed Ohmic Contacts.- 6.5.3 Multi-Layer Ohmic Contacts.- 6.6 Structural Analysis.- 6.7 Observations.- 7. Determination of Impurity and Carrier Concentrations.- 7.1 Impurity Binding Energy.- 7.2 Conductivity Type: Hot Probe and Hall Measurements.- 7.3 Density of States and Carrier Concentration.- 7.4 Electron and Hole Concentrations.- 7.5 Temperature Dependence of the Hole Concentration.- 7.6 Temperature Dependence of the Electron Concentration.- 7.7 Multiple Occupancy of the Valence Bands.- 7A Appendix: Fermi Integral.- 8. Carrier Transport.- 8.1 Ionized Impurity Scattering.- 8.2 Polar-Optical Phonon Scattering.- 8.3 Piezoelectric Scattering.- 8.4 Acoustic Phonon Scattering.- 8.5 Alloy Scattering.- 8.6 The Hall Factor.- 8.7 Other Methods Used for Calculati