Compact Transistor Modelling for Circuit Design (Paperback, Softcover Repri)

1 Introduction.- 1.1 Compact Models.- 1.1.1 Models Based on Device Physics.- 1.1.2 Numerical Table Models.- 1.1.3 Empirical Models.- 1.2 Compact Models and Simulation Programs.- 1.3 Subjects Treated in This Book.- References.- 2 Some Basic Semiconductor Physics.- 2.1 Quantum-Mechanical Concepts.- 2.2 Distribution Function and Carrier Concentration.- 2.3 The Boltzmann Transport Equation.- 2.4 Bandgap Narrowing.- 2.5 Mobility and Resistivity in Silicon.- 2.6 Recombination.- 2.7 Avalanche Multplication.- 2.8 Noise Sources.- 2.8.1 Shot Noise.- 2.8.2 Diffusion Noise and Thermal Noise.- 2.8.3 Flicker Noise.- References.- 3 Modelling of Bipolar Device Phenomena.- 3.1 Injection and Transport Models.- 3.1.1 Solution of the Continuity Equations.- 3.1.2 Injection Model.- 3.1.3 Transport Model.- 3.2 The Quasi-Static Approximation and the Charge Control Principle.- 3.3 Collector Currents and Stored Charges.- 3.3.1 General Relation Between Collector Current and Charges.- 3.3.2 The Integral Charge Control Relation.- 3.3.3 Current, Charges and Minority Carrier Concentrations.- 3.3.3.1 The Low-Injection Case: n(x) " Na(x).- 3.3.3.2 The High-Injection Case: n(x) " Na(x).- 3.3.3.3 The General Case.- 3.4 Base Currents.- 3.5 Depletion Charges and Capacitances.- 3.5.1 Influence of Current on QTc.- 3.6 Early Effect.- 3.7 Quasi-Saturation, Base Widening and Kirk Effect.- 3.7.1 The Charge Storage in the Epilayer.- 3.7.2 Influence of Ic: Ohmic and Hot Carrier Behaviour (Kirk Effect).- 3.7.3 Inverse Mode of Operation.- 3.8 Avalanche Multiplication.- 3.9 Series Resistances.- 3.9.1 Emitter Series Resistance.- 3.9.2 Base Resistance.- 3.9.3 Collector Series Resistance.- 3.10 Time- and Frequency-Dependent Behaviour.- 3.10.1 Charge Control and Quasi-Static Approach.- 3.10.2 Exact One-Dimensional Solution.- 3.10.3 Time Delays.- 3.10.4 Base Charge Partitioning.- 3.10.5 Second-Order Differential Operators.- 3.11 Transit Time and Cut-Off Frequency fT.- 3.12 Noise Behaviour.- 3.13 Temperature Dependences.- References.- 4 Compact Models for Vertical Bipolar Transistors.- 4.1 Ebers-Moll-Type Models.- 4.1.1 Basic Ebers-Moll Model.- 4.1.2 Extensions of the Basic Ebers-Moll Model.- 4.1.3 Temperature Dependence of the Parameters.- 4.1.4 Typical Results.- 4.2 Gummel-Poon-Type Models.- 4.2.1 Basic Gummel-Poon Model.- 4.2.2 Extensions.- 4.2.3 Full Quasi-Saturation Model.- 4.2.4 Typical Results.- 4.3 The MEXTRAM Model.- 4.3.1 Main Currents and Stored Charges.- 4.3.2 Quasi-Saturation and Hot-Carrier Effect in the Epilayer.- 4.3.3 Depletion Charges.- 4.3.4 Base Currents.- 4.3.5 Series Resistances.- 4.3.6 Modelling the Inactive Part and Substrate.- 4.3.7 Typical Results.- 4.4 Short Review.- 4.4.1 Basic Ebers-Moll Model.- 4.4.2 Extensions to the Ebers-Moll Model.- 4.4.3 Basic Gummel-Poon Model.- 4.4.4 Extensions to the Gummel-Poon Model.- 4.4.5 Mextram Models.- References.- 5 Lateral pnp Transistor Models.- 5.1 Model Definitions.- 5.1.1 Lateral pnp Models of the Ebers-Moll Type.- 5.1.2 Lateral pnp Models of the Gummel-Poon Type.- 5.2 Results.- 5.3 Shortcomings of Existing Models.- References.- 6 MOSFET Physics Relevant to Device Modelling.- 6.1 Formation of the Inversion Layer.- 6.1.1 Qualitative Discussion.- 6.1.2 Quantitative Analysis.- 6.2 The Ideal MOS Transistor Current.- 6.3 The Threshold Voltage.- 6.3.1 The Body Effect.- 6.3.2 Effect of Implants Additional to the Substrate Doping.- 6.3.3 Effect of Implants of Opposite Type to the Substrate Doping.- 6.3.4 Temperature Dependence.- 6.3.5 Short-Channel Effect.- 6.3.6 Narrow-Width Effect.- 6.4 Carrier Mobility in Inversion Layers.- 6.4.1 Bias Dependence of the Carrier Mobility.- 6.4.2 Temperature Dependence.- 6.4.3 Modelling of Effects Other than Mobility Via the ?-Parameters.- 6.5 Saturation Mode.- 6.5.1 Static Feedback.- 6.5.2 Channel-Length Modulation.- 6.6 Dynamic Operation.- 6.6.1 Quasi-Static Operation.- 6.6.2 Charges, Charge Distribution and Capacitances in the Active Region.- 6.6.3 Charges in the Off-State Region.