The Drift Diffusion Equation and Its Applications in Mosfet Modeling (Paperback)

1 Boltzmann's Equation.- 1.1 Introduction.- 1.2 Many-Body System in Equilibrium.- 1.2.1 Quantum Mechanics of Many-Body Systems.- 1.2.2 Green's Functions for Electrons.- 1.2.3 Self-Energy.- 1.2.4 Perturbation Theory.- 1.3 Non-Equilibrium Green's Functions.- 1.3.1 The Keldysh Formalism.- 1.3.2 Wigner and Boltzmann Equation.- References.- 2 Hydrodynamic Model.- 2.1 Introduction.- 2.2 Linear Response and Relaxation-Time Approximation.- 2.2.1 Linear Response.- 2.2.2 Low Field Mobility.- 2.2.3 Limits.- 2.3 Nonlinear Response and the Moment Method.- 2.3.1 Drifted Maxwellian.- 2.3.2 Moment Expansion of the Distribution Function.- 2.3.3 Two-Band System.- 2.4 Summary.- References.- 3 Carrier Transport in an Inversion Channel.- 3.1 Introduction.- 3.2 The Classical Limit ? ? 0.- 3.3 Surface Mobility.- References.- 4 High Energetic Carriers.- 4.1 Introduction.- 4.2 Impact Ionization Scattering Strength.- 4.3 Distribution Function.- 4.4 Impact Ionization Coefficient and Gate Oxide Injection.- 4.4.1 Impact Ionization Generation Rate.- 4.4.2 Gate Oxide Injection.- References.- 5 Degredation.- 5.1 Introduction.- 5.2 Analyzing a Degraded MOSFET.- 5.2.1 Electrical Characterization.- 5.2.2 Charge Pumping.- 5.3 The Degradation Process.- 5.3.1 Carrier Distributions in the Gate Oxide.- 5.3.2 Trap Equations.- References.- Appendix 1. Perturbation Theory and Diagram Technique.- Appendix 2. Inversion Channel Particle-Density Distribution in Equilibrium.- Author Index.