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· 제목 : Process and Device Simulation for MOS-VLSI Circuits (Paperback) 
· 분류 : 외국도서 > 기술공학 > 기술공학 > 전자공학 > 회로
· ISBN : 9789400968448
· 쪽수 : 636쪽
· 분류 : 외국도서 > 기술공학 > 기술공학 > 전자공학 > 회로
· ISBN : 9789400968448
· 쪽수 : 636쪽
목차
Diffusion in Silicon.- Thermal Oxidation: Kinetics, Charges, Physical Models, and Interaction with Other Processes in VLSI Devices.- The Use of Chlorinated Oxides and Intrinsic Gettering Techniques for VLSI Processing.- Ion Implantation.- Beam Annealing of Ion Implanted Silicon.- Materials Characterization.- Modeling of Polycrystalline Silicon Structures for Integrated Circuit Fabrication Processes.- Two-Dimensional Process Simulation - Supra.- Numerical Simulation of Impurity Redistribution Near Mask Edges.- Optical and Deep UV Lithography.- Wafer Topography Simulation.- Analyses of Nonplanar Devices.- Two Dimensional MOS-Transistor Modeling.- Fielday - Finite Element Device Analyses.
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