Investigation on Sige Selective Epitaxy for Source and Drain Engineering in 22 NM CMOS Technology Node and Beyond (Hardcover, 2019)

Introduction.- Strain technology of Si-based materials.- SiGe Epitaxial Growth and material characterization.- SiGe Source and Drain Integration and transistor performance investigation.- Pattern Dependency behavior of SiGe Selective Epitaxy.- Summary and final words.