Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications (Paperback, 2, 2020)

· 제목 : Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications (Paperback, 2, 2020) 
· 분류 : 외국도서 > 기술공학 > 기술공학 > 전자공학 > 회로
· ISBN : 9789811512148
· 쪽수 : 425쪽

Table of contents 

Ⅰ          Introduction

1           Features,　Principles and Developments of Ferroelectric-gate Field Effect Transistors

- Prof. M. Okuyama

  Ⅱ          Practical Characteristics of Inorganic Ferroelectric-gate FETs : Si-Based Ferroelectric-gate Field Effect Transistors

2           Development of High-Endurance and Long-Retention FeFETs

of Pt/Ca_ySr_1?yBi₂Ta₂O₉/(HfO₂)_x(Al₂O₃)_1?x/Si Gate Stacks

- Mitsue Takahashi and Shigeki Sakai

 

3           Downsizing of high-endurance and long-retention Pt/Ca_ySr_1?yBi₂Ta₂O₉/(HfO₂)_x(Al₂O₃)_1?x/Si FeFETs

- Mitsue Takahashi and Shigeki Sakai

 

4           Nonvolatile field-effect transistors using ferroelectric doped HfO₂ films

        - Uwe Schroeder, Stefan Slesazeck, Halid Mulaosmanovic and Thomas Mikolajick

 

5           Switching in nanoscale hafnium oxide based ferroelectric transistor

         - Halid Mulaosmanovic, Uwe Schroeder, Thomas Mikolajick and Stefan Slesazeck

 

 

III          Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors

 

6           Oxide-channel ferroelectric-gate thin film transistors with nonvolatile memory function

- Eisuke Tokumitsu

 

7           ZnO/Pb(Zr,Ti)O₃ gate structure Ferroelectric FETs

- Yukihiro Kaneko

 

8           Novel ferroelectric gate field-effect transistors (FeFETs); controlled polarization-type FeFETs

- Norifumi Fujimura and Takeshi Yoshimura

 

 

Ⅳ          Practical Characteristics of Organic Ferroelectric-Gate FETs: Si-Based Ferroelectric-Gate Field Effect Transistors

 

9           Non-volatile Ferroelectric Memory Transistors Using PVDF, P(VDF-TrFE) and Blended PVDF/P(VDF-TrFE) Thin films

- Dae-Hee Han and Byung-Eun Park

 

10         Poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE))/Si structure Ferrorlrctric-gate FETs

- Yoshihisa Fujisaki 

 

 

V          Practical Characteristics of Organic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors

 

11         P(VDF-TrFE) and P(VDF-TeFE)/organic semiconductor structure ferroelectric-gate FET memories

-Takeshi Kanashima and Masanori Okuyama

 

12         Nonvolatile Ferroelectric Memory Thin-Film Transistors Using a Poly(vinylidene fluoride trifluoroethylene) Gate Insulator and an Oxide Semiconductor Active Channel

-Sung-Min Yoon

 

 

VI         Practical Characteristics of Organic Ferroelectric-Gate FETs : Ferroelectric-Gate Field Effect Transistors with Flexible Substrates

 

13         Mechanically Flexible Non-volatile Field Effect Transistor Memories with

Ferroelectric Polymers

-Richard H. Kim and Cheolmin Park

 

14         Paper Transistors with Organic Ferroelectric P(VDF-TrFE) Thin Films Using a Solution Processing Method

- Dae-Hee Han and Byung-Eun Park

 

15         Non-volatile Organic Ferroelectric field-effect transistors fabricated on Flexible Substrates

- Dae-Hee Han and Byung-Eun Park

 

 

Ⅶ         Applications and Future Prospects

 

16         Novel applications to NAND flash memory circuits

-Shigeki Sakai and Mitsue Takahashi

 

17         Novel Applications of Antiferroelectrics and Relaxor Ferroelectrics: a Material’s Point of View

- Park Min Hyuk Park and Cheol Seong Hwang

 

18         Polymorphism of hafnia-based ferroelectrics for ferroelectric field-effect transistors

- Min Hyuk Park

 

19         Adaptive-Learning Synaptic Devices Using Ferroelectric-Gate Field-Effect Transistors for Neuromorphic Applications

-Sung-Min Yoon and Hiroshi Ishiwara

 

20         FeFETs for neuromorphic systems

- Halid Mulaosmanovic, Thomas Mikolajick and Stefan Slesazeck

 

21         Applications of Oxide Channel Ferroelectric-Gate Thin Film Transistors

-Eisuke Tokumitsu and Tatsuya Shimoda