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· 분류 : 외국도서 > 기술공학 > 기술공학 > 전자공학 > 반도체
· ISBN : 9781439815229
· 쪽수 : 603쪽
· 출판일 : 2010-12-02
목차
Part I: Basic Physical and Chemical Properties Fundamentals and the Future of Semiconductor Device Technology, M. Mastro The Challenge of III?V Materials Integration with Si Microelectronics, T. Li Part II: GaN and Related Alloys on Silicon Growth and Integration Techniques III-Nitrides on Si Substrate, J. Li, J.Y. Lin, H. Jiang, and N. Sawaki New Technology Approaches, A. Dadgar Part III: III?V Materials and Device Integration Processes with Si Microelectronics Group III-A Nitrides on Si: Stress and Microstructural Evolution, S. Raghavan and J.M. Redwing Direct Growth of III?V Devices on Silicon, T. Kazior, K.J. Herrick, and J. LaRoche Optoelectronic Device Integrated on Si, Di Liang and J.E. Bowers Reliability of III?V Electronic Devices, A.A. Immorlica, Jr. Part IV: Defect and Properties Evaluation and Characterization In Situ Curvature Measurements, Strains, and Stresses in the Case of Large Wafer Bending and Multilayer Systems, R. Clos and A. Krost X-Ray Characterization of Group III-Nitrides, A. Krost and J. Blasing Luminescence in GaN, F. Bertram Part V: Device Structures and Properties GaN-Based Optical Devices on Silicon, A. Dadgar The Conventional III?V Materials and Devices on Silicon, E.Y. Chang III?V Solar Cells on Silicon, S.A. Ringel and T.J. Grassman















