Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET (Paperback)

Preface.- Acknowledgments.- Introduction.- Historical Perspectives of Scaled MOSFET Evolution.- Simulation Results of On-State Drain Current and Subthreshold Drain Current at Substrate Temperatures Below 300 K.- Simulation Results on Substrate Mobility and On-Channel Mobility of Conventional Long-Channel ??-MOSFET at Substrate Temperatures 300 K and below.- Simulation Outcomes of Subthreshold Slope Factor or Coefficient for Different Substrate Temperatures at the Vicinity of a Subthreshold Region to Deep Subthreshold Region of a Long-Channel ??-MOSFET.- Review of Scaled Device Architectures for Their Feasibility To Low-Temperature Operation Simulation Perspectives of the Author's Current Research.- Summary of Research Results and Conclusions.- References.- Author's Biography.